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BFG424F_15 Datasheet, PDF (4/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor
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Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
7. Characteristics
Table 7: Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)CBO collector-base
IC = 2.5 µA; IE = 0 mA
breakdown voltage
V(BR)CEO collector-emitter
IC = 1 mA; IB = 0 mA
breakdown voltage
V(BR)EBO open-collector
emitter-base
breakdown voltage
IE = 2.5 µA; IC = 0 mA
ICBO
collector-base
cut-off current
IE = 0 mA; VCB = 4.5 V
hFE
CCES
DC current gain
collector-emitter
capacitance
IC = 25 mA; VCE = 2 V
VCB = 2 V; f = 1 MHz
CEBS
emitter-base
capacitance
VEB = 0.5 V; f = 1 MHz
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
fT
Gp(max)
|s21|2
NF
PL(1dB)
transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
maximum power
gain
IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C
noise figure
IC = 2 mA; VCE = 2 V;
f = 900 MHz; ΓS = Γopt
IC = 2 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt
output power at
1 dB gain
compression
IC = 25 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS(opt); ZL = ZL(opt)
IP3
third-order intercept IC = 25 mA; VCE = 2 V; f = 2 GHz;
point
ZS = ZS(opt); ZL = ZL(opt)
Min
10
4.5
1
-
50
-
-
-
-
[1] -
-
-
-
[2] -
[2] -
Typ
-
-
-
-
80
363
475
102
25
23
18.5
0.8
1.2
12
22
Max
-
-
-
15
120
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
nA
fF
fF
fF
GHz
dB
dB
dB
dB
dBm
dBm
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8.
[2] ZS is optimized for noise; ZL is optimized for gain.
BFG424F_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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