BFG424F_15 Datasheet, PDF (3/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor

Philips Semiconductors
BFG424F
NPN 25 GHz wideband transistor
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
T_sp ≤ 90 °C
-
-
-
-
[1] _-
−65
-
[1] T_sp is the temperature at the soldering point of the emitter pins.
Max
10
4.5
1
30
135
+150
150
Unit
V
V
V
mA
mW
°C
°C
6. Thermal characteristics
Table 6:
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
T_sp ≤ 90 °C
[1] T_sp is the temperature at the soldering point of the emitter pins.
Typ
[1] ₃₄₀
Unit
K/W
200
P_tot
(mW)
150
001aad817
100
50
0
0
40
Fig 1. Power derating curve
80
120
160
T_sp (°C)
BFG424F_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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