PRF957_15 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Product specification
PRF957
handbook⁴,⁰h⁰alfpage
Ptot
(mW)
300
MGS512
200
100
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating as a function of soldering
point temperature.
handbook¹,²h⁰alfpage
hFE
80
MGS513
40
0
0
10
20
30
40
50
IC (mA)
V_CE = 6 V.
Fig.3 DC current gain as a function of collector
current; typical values.
0.8
handbook, halfpage
Cre
(pF)
0.6
MGS514
0.4
0.2
0
0
4
8 _{VCB (V)} 12
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
1999 Jul 23
handbook,¹h⁰alfpage
fT
(GHz)
8
MGS515
6
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 6 V; f_m = 1 GHz; T_amb = 25 _°C.
Fig.5 Transition frequency as a function of
collector current; typical values.
5