PRF957_15 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Product specification
PRF957
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
DC characteristics
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-base leakage current
emitter-base leakage current
DC current gain
AC characteristics
C_re
f_T
|s₂₁|²
G_UM
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
NF
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
I_C = 100 µA; I_E = 0
I_C = 100 µA; I_B = 0
I_E = 10 µA; I_C = 0
V_CB = 10 V; I_E = 0
V_EB = 1 V; I_C = 0
I_C = 5 mA; V_CE = 6 V
I_C = 15 mA; V_CE = 6 V
20
−
−
V
10
−
−
V
1.5 −
−
V
−
−
100 nA
−
−
100 nA
50
100 200
−
100 −
I_C = 0; V_CB = 6 V; f = 1 MHz
−
I_C = 30 mA; V_CE = 6 V; f_m = 1 GHz −
I_C = 30 mA; V_CE = 6 V; f = 1 GHz −
I_C = 30 mA; V_CE = 6 V;
−
T_amb = 25 °C; f = 1 GHz
I_C = 30 mA; V_CE = 6 V;
−
T_amb = 25 °C; f = 2 GHz
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
−
f = 1 GHz
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
−
f = 2 GHz
0.4 −
8.5 −
14
−
15
−
9.2 −
1.3 −
1.8 −
pF
GHz
dB
dB
dB
dB
dB
Note
1. G_UM is the maximum unilateral power gain, assuming s₁₂ is zero. G_UM = 10 log -₍--1-----_–------s---₁---₁---s-₂---²₎--¹₍---1--²---_–------s---₂--₂-----₂---₎ dB
1999 Jul 23
4