PRF957_15 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Product specification
PRF957
FEATURES
• Small size
• Low noise
• Low distortion
• High gain
• Gold metallization ensures excellent reliability.
PINNING
PIN
1
base
2
emitter
3
collector
DESCRIPTION
APPLICATIONS
• Communication and instrumentation systems.
DESCRIPTION
Silicon NPN transistor in a surface mount 3-pin SOT323
package. The transistor is primarily intended for wideband
applications in the GHz-range in the RF front end of analog
and digital cellular telephones, cordless phones, radar
detectors, pagers and satellite TV-tuners.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM062
Marking code: W2.
Fig.1 Simplified outline (SOT323) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power gain
NF
noise figure
P_tot
R_{th j-s}
total power dissipation
thermal resistance from junction
to soldering point
CONDITIONS
I_C = 0; V_CB = 6 V; f = 1 MHz
I_C = 30 mA; V_CE = 6 V; f_m = 1 GHz
I_C = 30 mA; V_CE = 6 V;
T_amb = 25 °C; f = 1 GHz
Γ_S = Γ_opt; I_C = 5 mA; V_CE = 6 V;
f = 1 GHz
T_s = 60 °C; note 1
P_tot = 270 mW
MIN.
−
−
−
TYP.
0.4
8.5
15
MAX. UNIT
−
pF
−
GHz
−
dB
−
1.3 −
dB
−
−
270 mW
−
−
425 K/W
Note
1. T_s is the temperature at the soldering point of the collector pin.
1999 Jul 23
2