BFS25A_2015 Datasheet, PDF (5/11 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
handbook, ²h⁵alfpage
gain
(dB)
20
G _UM
MRC035
20
handbook, halfpage
G _UM
(dB)
16
12
MRC036
VCE = 3 V
1V
15
8
MSG
10
4
5
0
0
0.5
1
1.5
V_CE = 1 V; f = 500 MHz; T_amb = 25 °C.
2
2.5
IC (mA)
Fig.6 Gain as a function of collector current.
0
0
0.5
1
1.5
2
2.5
IC (mA)
f = 1 GHz; T_amb = 25 °C.
Fig.7 Maximum unilateral power gain as a
function of collector current.
handbook, ⁵h⁰alfpage
gain
(dB)
40
30
20
10
0
0.01
G _UM
MRC034
MSG
G _max
0.1
1
10
f (GHz)
I_C = 0.5 mA; V_CE = 1 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
December 1997
50
handbook, halfpage
gain
(dB)
40
30
20
10
0
10^−2
G _UM
MSG
10^−1
MRC033
G _max
1
10
f (GHz)
I_C = 1 mA; V_CE = 1 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
5