BFS25A_2015 Datasheet, PDF (2/11 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFS25A
FEATURES
• Low current consumption
• Low noise figure
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N6
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for use in RF amplifiers
and oscillators in pagers and pocket
phones with signal frequencies up to
2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
open base
up to T_s = 170 °C; note 1
I_C = 0.5 mA; V_CE = 1 V; T_j = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 °C
I_c = 0.5 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 °C
I_c = 0.5 mA; V_CE = 1 V; f = 1 GHz;
T_amb = 25 °C
MIN.
−
−
−
−
50
3.5
−
−
TYP.
−
−
−
−
80
5
13
1.8
MAX.
8
5
6.5
32
200
−
−
−
UNIT
V
V
mA
mW
GHz
dB
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 170 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
32
150
175
UNIT
V
V
V
mA
mW
°C
°C
December 1997
2