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| BFS25A_2015 Datasheet, PDF (3/11 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor | |||
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product speciï¬cation
BFS25A
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 170 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cre
fT
GUM
F
collector cut-off current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise ï¬gure
IE = 0; VCB = 5 V
IC = 0.5 mA; VCE = 1 V
IC = 0; VCB = 1 V; f = 1 MHz
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
IC = 0.5 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
Îs = Îopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Îs = Îopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
THERMAL RESISTANCE
190 K/W
MIN. TYP. MAX. UNIT
â
â
50 nA
50 80 200
â
0.3 0.45 pF
3.5 5
â
GHz
â
13 â
dB
â
1.8 â
dB
â
2
â
dB
December 1997
3
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