BFR93A_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFR93A
handb_Co_cok, h¹alfpage
(pF)
0.8
MBB252
0.6
0.4
0.2
0
0
4
8
12
16
V _CB (V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
8
handbook, halfpage
fT
(GHz)
6
MCD089
4
2
0
0
10
20
30
40
IC (mA)
V_CE = 5 V; f = 500 MHz; T_j = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
30
handbook, halfpage
gain
(dB)
20
10
MBB255
MSG
GUM
handbook,³h⁰alfpage
gain
(dB)
20
10
MBB256
MSG
GUM
0
0
10
20
30 _{IC (mA)} 40
0
0
10
20
30
40
IC (mA)
V_CE = 8 V; f = 500 MHz.
Fig.7 Gain as a function of collector current;
typical values.
1997 Oct 29
V_CE = 8 V; f = 1 GHz.
Fig.8 Gain as a function of collector current;
typical values.
5