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BFR93A_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor
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Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFR93A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
VALUE
260
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Cc
collector capacitance
Ce
emitter capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
F
noise figure (note 2)
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 5 V
IC = 30 mA; VCE = 5 V
IE = ie = 0; VCB = 5 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
IC = 30 mA; VCE = 5 V; f = 500 MHz
IC = 30 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C
IC = 5 mA; VCE = 8 V; f = 2 GHz;
Γs = Γopt; Tamb = 25 °C
notes 2 and 3
notes 2 and 4
MIN. TYP. MAX. UNIT
−
−
50 nA
40 90 −
−
0.7 −
pF
−
1.9 −
pF
−
0.6 −
pF
4.5 6
−
−
13 −
GHz
dB
−
7
−
dB
−
1.9 −
dB
−
3
−
dB
−
425 −
mV
−
−50 −
dB
Notes
1. GUM is the maximum unilateral power gain, assuming
S12 is
zero and
GUM
=
10
log----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB
.
2. Measured on the same die in a SOT37 package (BFR91A).
3. dim = −60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB at fq = 803.25 MHz;
Vr = VO −6 dB at fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 30 mA; VCE = 8 V; RL = 75 Ω; Tamb = 25 °C;
Vp = 200 mV at fp = 250 MHz;
Vq = 200 mV at fq = 560 MHz;
measured at fp + fq = 810 MHz.
1997 Oct 29
3
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