BFR93A_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 6 GHz wideband transistor

Philips Semiconductors
NPN 6 GHz wideband transistor
Product specification
BFR93A
FEATURES
• High power gain
• Low noise figure
• Very low intermodulation distortion.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
APPLICATIONS
• RF wideband amplifiers and
oscillators.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
page
3
1
Top view
2
MSB003
Marking code: R2p.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
V_CBO
V_CEO
I_C
P_tot
C_re
f_T
G_UM
F
V_O
collector-base voltage
open emitter
−
collector-emitter voltage
open base
−
collector current (DC)
−
total power dissipation
T_s ≤ 95 °C
−
feedback capacitance
I_C = 0; V_CE = 5 V; f = 1 MHz
0.6
transition frequency
I_C = 30 mA; V_CE = 5 V; f = 500 MHz
6
maximum unilateral power gain I_C = 30 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C 13
I_C = 30 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C 7
noise figure
I_C = 5 mA; V_CE = 8 V; f = 1 GHz; Γ_s = Γ_opt;
1.9
T_amb = 25 °C
output voltage
d_im = −60 dB; I_C = 30 mA; V_CE = 8 V;
425
R_L = 75 Ω; T_amb = 25 °C;
f_p + f_q − f_r = 793.25 MHz
MAX. UNIT
15 V
12 V
35 mA
300 mW
−
pF
−
GHz
−
dB
−
dB
−
dB
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 95 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX. UNIT
15 V
12 V
2
V
35 mA
300 mW
+150 °C
+175 °C
1997 Oct 29
2