BFR540_15 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR540
600
1/2 page (Datasheet)
P _tot
(mW)
400
MEA398 - 1
22 mm
250
handbook, halfpage
hFE
200
150
MRA687
100
200
50
0
0
50
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
010_−2
10^−1
1
10 _{IC (mA)} 10²
V_CE = 8 V.
Fig.3 DC current gain as a function of collector
current.
1.0
handbook, halfpage
Cre
(pF)
0.8
0.6
MRA688
0.4
0.2
0
0
4
8 _{VCB (V)} 12
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
2000 May 30
12
handbook, halfpage
fT
(GHz)
8
4
MRA689
VCE = 8V
VCE = 4V
0
10^−1
1
T_amb = 25 °C; f = 1 GHz.
10 _{IC (mA)} 10²
Fig.5 Transition frequency as a function of
collector current.
5