BFR540_15 Datasheet, PDF (3/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
T_s ≤ 70 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
from junction to soldering point
see note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
Product specification
BFR540
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
VALUE
260
UNIT
K/W
2000 May 30
3