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BFR540_15 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral
power gain; note 1
|s21|2
F
insertion power gain
noise ï¬gure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
Vo
output voltage; note 3
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
Îs = Îopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
IC = 40 mA; VCE = 8 V; RL = 50 â¦;
Tamb = 25 °C; f = 900 MHz
note 2
IC = 40 mA; VCE = 8 V;
ZL = ZS = 75 â¦; Tamb = 25 °C
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
GUM = 10 log (---1-----â------s---1---1---s-2---2)--(1---1-2---â------s----2--2----2----) dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 â¦;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pâq) = 898 MHz and f(2qâp) = 904 MHz.
3. dim = â60 dB (DIN 45004B);
Vp = VO; Vq = VO â6 dB; f p = 795.25 MHz;
VR = VO â6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
MIN. TYP. MAX. UNIT
â
â
50 nA
100 120 250
â
2
â
pF
â
0.9 â
pF
â
0.6 â
pF
â
9
â
GHz
â
14 â
dB
â
7
â
dB
12 13 â
dB
â
1.3 1.8 dB
â
1.9 2.4 dB
â
2.1 â
dB
â
21 â
dBm
â
34 â
dBm
â
550 â
mV
2000 May 30
4
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