BFS17W_2015 Datasheet, PDF (4/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17W
2
handbook, halfpage
Cre
(pF)
1.5
MBG238
1
0.5
0
0
2
4
6
8
10
VCB (V)
I_B = i_b = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook², ^.h⁵alfpage
fT
(GHz)
2
1.5
MBG239
VCE = 10 V
5V
1
1
10
10²
IC (mA)
T_amb = 25 °C; f = 500 MHz.
Fig.5 Transition frequency as a function
of collector current; typical values.
20
handbook, halfpage
F
(dB)
15
10
MBG240
5
0
10^−3 10^−2 10^−1
1
10
10² 10³
f (MHz)
V_CE = 10 V.
Fig.6 Minimum noise figure as function of
frequency; typical values.
1995 Sep 04
4