BFS17W_2015 Datasheet, PDF (2/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
2
Top view
MBC870
Marking code: E1
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
C_c
C_re
T_j
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
collector capacitance
feedback capacitance
junction temperature
up to T_s = 118 °C; note 1
I_C = 2 mA; V_CE = 1 V
I_C = 25 mA; V_CE = 5 V
I_E = 0; V_CB = 10 V; f = 1 MHz
I_C = 1 mA; V_CE = 5 V; f = 1 MHz
Note
1. T_s is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s = 118 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
25
−
−
−
−
TYP.
−
−
−
−
90
1.6
0.8
0.75
−
MAX.
25
15
50
300
−
−
1.5
−
175
UNIT
V
V
mA
mW
GHz
pF
pF
°C
MIN.
−
−
−
−
−
−65
−
MAX.
25
15
2.5
50
300
+150
175
UNIT
V
V
V
mA
mW
°C
°C
1995 Sep 04
2