BFS17W_2015 Datasheet, PDF (3/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point up to T_s = 118 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE UNIT
190
K/W
CHARACTERISTICS
T_j = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
I_CBO
collector cut-off current
h_FE
DC current gain
f_T
transition frequency
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
F
noise figure
CONDITIONS
I_E = 0; V_CB = 10 V
I_C = 2 mA; V_CE = 1 V
I_C = 25 mA; V_CE = 5 V;
f = 500 MHz
I_E = i_e = 0; V_CB = 10 V;
f = 1 MHz
I_C = i_c = 0; V_EB = 0.5 V;
f = 1 MHz
I_B = i_b = 0; V_CE = 5 V;
f = 1 MHz; T_amb = 25 °C
I_C = 2 mA; V_CE = 5 V;
f = 500 MHz; Γ_S = Γ_opt
MIN.
−
25
−
TYP.
−
90
1.6
MAX.
10
−
−
UNIT
nA
GHz
−
0.8
1.5
pF
−
2
−
pF
−
0.75
−
pF
−
4.5
−
dB
handbook⁴,⁰h⁰alfpage
P _tot
(mW)
300
MLB587
200
100
0
0
50
100
150
200
Ts ( ^o C)
Fig.2 Power derating curve.
1995 Sep 04
handbook,⁶h⁰alfpage
hFE
40
MBG237
20
0
10^−1
1
10 _{IC (mA)} 10²
V_CE = 1 V.
Fig.3 DC current gain as a function of collector
current; typical values.
3