BFR106_2015 Datasheet, PDF (4/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
600
1/2 page (Datasheet)
P _tot
(mW)
400
MEA398 - 1
22 mm
120
handbook, halfpage
h _FE
80
MBB774
200
40
0
0
50
100
150
Ts
(
o
200
C)
Fig.2 Power derating curve.
0
0
40
80
120
I _C (mA)
V_CE = 9 V; T_amb = 25 °C.
Fig.3 DC current gain as a function of collector
current.
8
handbook, halfpage
fT
(GHz)
6
MBB773
4
2
0
0
40
80 _{I C (mA)} 120
V_CE = 9 V; f = 500 MHz; T_j = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
handbook,⁴h⁰alfpage
G _UM
(dB)
30
MEA399
20
10
0
10
10²
10³ _{f (MHz)} 10⁴
I_C = 30 mA; V_CE = 6 V; T_amb = 25 °C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
4