BFR106_2015 Datasheet, PDF(3/8 Page) Quanzhou Jinmei Electronic Co.,Ltd.

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BFR106_2015 Datasheet, PDF (3/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

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Philips Semiconductors

NPN 5 GHz wideband transistor

Product speciï¬cation

BFR106

THERMAL RESISTANCE

SYMBOL

Rth j-s

PARAMETER

thermal resistance from junction to

soldering point

CONDITIONS

up to Ts = 70 Â°C; note 1

Note

1. Ts is the temperature at the soldering point of the collector tab.

THERMAL RESISTANCE

210 K/W

CHARACTERISTICS

Tj = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

ICBO

hFE

Cre

GUM

PARAMETER

collector cut-off current

DC current gain

transition frequency

collector capacitance

emitter capacitance

feedback capacitance

maximum unilateral power gain

(note 1)

noise ï¬gure

second order intermodulation

distortion

output voltage

CONDITIONS

IE = 0; VCB = 10 V

IC = 50 mA; VCE = 9 V

IC = 50 mA; VCE = 9 V; f = 500 MHz;

Tamb = 25 Â°C

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCE = 10 V; f = 1 MHz

IC = 30 mA; VCE = 6 V; f = 800 MHz;

Tamb = 25 Â°C

IC = 30 mA; VCE = 6 V; f = 800 MHz;

Tamb = 25 Â°C

note 2

note 3

MIN. TYP. MAX. UNIT

100 nA

25 80 â

GHz

1.5 â

4.5 â

1.2 â

11.5 â

3.5 â

â50 â

350 â

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM = 10 log ï£ï£«----1-----â------S----1---1----2S---ï£¸ï£¶-2--ï£ï£«-1---1-2----â------S----2--2-----2--ï£¸ï£¶-- dB.

2. IC = 30 mA; VCE = 6 V; RL = 75 â¦; Tamb = 25 Â°C;

f(p+q) = 810 MHz; Vo = 100 mV.

3. dim = â60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 â¦; Tamb = 25 Â°C; f(p+qâr) = 793.25 MHz.

September 1995

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