BFR106_2015 Datasheet, PDF (2/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1 base
2 emitter
3 collector
age
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
V_o
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
20
V
−
−
15
V
−
−
100 mA
up to T_s = 70 °C; note 1
−
I_C = 50 mA; V_CE = 9 V; T_amb = 25 °C 25
I_C = 50 mA; V_CE = 9 V; f = 500 MHz; −
T_amb = 25 °C
I_C = 30 mA; V_CE = 6 V; f = 800 MHz; −
T_amb = 25 °C
I_C = 50 mA; V_CE = 9 V; R_L = 75 Ω;
−
T_amb = 25 °C; d_im = −60 dB;
f_(p+q−r) = 793.25 MHz
−
500 mW
80 −
5
−
GHz
11.5 −
dB
350 −
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 70 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
100
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2