DB105A Datasheet, PDF (5/7 Pages) Jinan Jing Heng Electronics Co., Ltd. – Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c

R
SEMICONDUCTOR
Electrical Specifications
FIG.3 Maximum Allowable Ambient temperature vs on-state
Current
FIG.4 Normalized Repetitive Peak Breakover
Current vs Junction Temperature
140
120
100
80
60
40
25
20
0
CURRENT WAVEFORM: Sinusoidal, 60Hz
LOAD: Resistive or inductive
FREE AIR RATING
SMB(DO-214AA)
DO-15
DO-41
0.2
0.4
0.6
0.8
1.0
RMS on-state current (IT(RMS)-Amps
FIG.5 Normalized CBO Changes vs Case
Temperature
+4
+2
0
-2
-4
-6
-8
-10
-12
-40 -20
0
+20 +25 +40
+60
+80
Junction Temperature(TJ) C
+100 +120
FIG.7 On-State Current vs On-State Voltage
9
8
7
6
5
4
V=VBO
3
2
1
20
30 40 50 60 70 80 90 100 110 120
Junction Temperature (TJ)- C
FIG.6 Repetitive Peak On-State Current (ITRM) vs
Pulse Width at Various Frequencies
di/dt Limit Line
600
400
200
Non-Repeated
ITRM
VBO Firing
Current
wavetorm to
100
80
60
40
20
f=10Hz
f=100Hz
Repetition _{Frequency f=5Hz}
vt
10
f=1kHz
8
6
4
f=5kHz
f=10kHz
2
1
f=20kHz
0.8
0.6
4 68
2
2X10-3
1X10-2
TJ=110 C Max
4 68
2 468 1
1X10-1
Pulse base width (to)-mSec.
FIG.8 Power Dissipation (Typical) vs On-State Current
9
8
TL=25 C
7
6
SMB
5
DO-41
4
3
2
DO-15
1
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Positive or Negative Instantaneous On-State Voltage(VT)-Volts
2.2
CURRENT WAVEFORM: Sinusoidal
2.0 _{LOAD: Resistive or Inductive}
CONDUCTION ANGLE: See Figure 4
1.8
1.6
1.4
DO-15
1.2
1.0
DO-41
0.8
0.6
SMB
0.4
0.2
0
0.2
0.4
0.6
0.8
1.0
RMS On-State Current (IT(RMS))-Amps
JINAN JINGHENG ELECTRONICS CO., LTD.
5-5
HTTP://WWW.JINGHENGGROUP.COM