DB105A Datasheet, PDF (3/7 Pages) Jinan Jing Heng Electronics Co., Ltd. – Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c

R
SEMICONDUCTOR
Electrical Specifications
PART NUMBER
IT(RMS)
On-state
RMS Current
Tj≦110 C
50/60Hz
DO-41
DO-15
SMB
Amps
DB105A
DB110A
DB120A
DB130A
DB140A
DB150A
DB200A
DB220A
DB240A
DB250A
DB300A
DB105B
DB110B
DB120B
DB130B
DB140B
DB150B
DB200B
DB220B
DB240B
DB250B
DB300B
DB105S
DB110S
DB120S
DB130S
DB140S
DB150S
DB200S
DB220S
DB240S
DB250S
DB300S
MAX
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
VDRM
Repetitive
Peak
Off-state
Voltage
Volts
MIN
±90
±90
±90
±90
±90
±90
±180
±180
±190
±190
±190
VBO
Breakover voltage
50/60Hz sine wave
Volts
MIN
95
104
110
120
130
140
190
205
220
240
270
MAX
113
118
125
138
146
170
215
230
250
280
330
IDRM
IBO
Repetitive Peak
Off-state Current
50/60hz Sine Wave
V=VDRM
Breakover
Current
50/60Hz
sine wave
Amps
Amps
MAX
5
5
5
5
5
5
5
5
5
5
5
MAX
10
10
10
10
10
10
10
10
10
10
10
IH
Dynamic
Holding Current
50/60hz
Sine Wave
R=100 OHMS
mAmps
TYP
40
40
MAX
100
100
40
100
40
100
40
100
40
100
40
100
40
100
40
100
40
100
40
100
VTM
Peak On-state Voltage
IT=1Amp
DO-41
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
Volts
MAX
Package
DO-15
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
SMB
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
ITSM
Peak One Cycle
Surge Current
50/60Hz Sine Wave
(Non-Repetitive)
Amps
60Hz
50Hz
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
20
16.7
RS
Switching
Resistance
(VBO-VS)
Rs =
(IS-IBO)
50/60Hz
Sine Wave
KΩ
MIN
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
dv/dt
Critical
Rate-of-rise
Of Off-state
Voltage at
Rate VDRM
Tj ≦100 C
Volts/ second
MIN
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
1500
di/dt
Critical
Rate-of-Rise
Of On-State
Current
Amps/ second
TYP
150
150
150
150
150
150
150
150
150
150
150
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5-3
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