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DB105A Datasheet, PDF (4/7 Pages) Jinan Jing Heng Electronics Co., Ltd. – Bilateral Voltage triggered Swit h Breakover Voltage:95-330Volts c
R
SEMICONDUCTOR
Electrical Specifications
V-I Characteristics
+I
Thermal Resistance
IT
IH
IS
IBO
IDRM
-V
(VBO-VS)
RS=
(IS-IBO)
RS
+V
VT VDRM VSVBO
-I
THERMAL RESISTANCE(STEADY STATE)
R JC(R JA) C/W (TYPICAL)
DO-41
AXIAL LEAD
15(50)
DO-15
DO-214AA(SMB)
AXIAL LEAD SURFACE MOUNT
14(45)
17(75)
FIG.1 Normalized DC Holding Current vs case/Lead
Temperature
Case Temperature(TC) C
FIG.2 Peak surge current vs surge current duration
100
SUPPLY FREQUENCY: 60Hz Sinusoidal
LOAD: Resistive
40
RMS ON-STATE CURRENT: IT RMS Maximum
Rated value at Special junction
30
temperature
20
10
8.0
6.0
4.0
BLOCKING CAPABILITY MAY BE LOST DURING
AND IMMEDIATELY FOLLOWING SURGE
CURRENT IMTERVAL
2.0 OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION
TEMPERATURE HAS RETURNED TO STEADY-STATE RATED
VALUE
1.0
1.0
10
100
Surge Current Duration- Full Cycles
1000
JINAN JINGHENG ELECTRONICS CO., LTD.
5-4
HTTP://WWW.JINGHENGGROUP.COM