MIXA20WB1200TMI Datasheet, PDF (9/11 Pages) IXYS Corporation – XPT IGBT Module

Brake Diode
20
15
I_C
10
[A]
5
T_VJ = 125°C
25°C
2.4
T_VJ = 125°C
V_R = 600 V
2.0
Q_rr ^1.6
[μC] 1.2
0.8
MIXA20WB1200TMI
tentative
40 A
20 A
10 A
24
T_VJ = 125°C
V_R = 600 V
20
I_RR
16
[A]
12
40 A
20 A
10 A
0
0
Fig. 1
1
2
3
V_CE [V]
Typ. Forward current
versus V_F
0.4
200
300
400
500
-di_F /dt [A/μs]
Fig. 2 Typ. reverse recovery
charge Q_rr versus di/dt
8
200
300
400
500
-di_F /dt [A/μs]
Fig. 3 Typ. peak reverse current
I_RM versus di/dt
600
40 A
500
t_rr ⁴⁰⁰ _{20 A}
[ns] ₃₀₀
10 A
200
T_VJ = 125°C
V_R = 600 V
0.6
T_VJ = 125°C
V_R = 600 V
40 A
0.5
E_rec
0.4
[mJ]
20 A
0.3
Fig. 4 Dynamic parameters
Q_r, I_RM versus T_VJ
100
200
300
400
500
-di_F /dt [A/μs]
Fig. 5 Typ. recovery time
t_rr versus -di_F /dt
0.2 ^{10 A}
200
300
400
500
-di_F /dt [A/μs]
Fig. 6 Typ. recovery energy
E_rec versus -di/dt
10
Z_thJC
1
[K/W]
0.1
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
R_i
1 0.8
2 0.58
3 0.98
4 0.04
t_i
0.002
0.03
0.03
0.08
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129