MIXA20WB1200TMI Datasheet, PDF (2/11 Pages) IXYS Corporation – XPT IGBT Module

Rectifier
Symbol
V_RSM
V_RRM
I_R
V_F
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
V_R = 1600 V
V_R = 1600 V
I_F = 20 A
I_F = 40 A
IF = 20 A
I_F = 40 A
T_C = 80°C
rectangular
d =⅓
V_F0
r_F
R _thJC
R _thCH
P_tot
I _FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C_J
junction capacitance
V_R = 400 V; f = 1 MHz
MIXA20WB1200TMI
tentative
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125 °C
T_VJ = 150°C
Ratings
min. typ. max. Unit
1700 V
1600 V
10 µA
1 mA
1.19 V
1.54 V
1.12 V
1.59 V
70 A
T_VJ = 150°C
T_C = 25°C
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 45°C
V_R = 0 V
T_VJ = 150°C
V_R = 0 V
T_VJ = 25°C
0.86 V
12.3 mΩ
1.8 K/W
0.35
K/W
70 W
270 A
290 A
230 A
250 A
365 A²s
350 A²s
265 A²s
260 A²s
10
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129