MIXA20WB1200TMI Datasheet, PDF (8/11 Pages) IXYS Corporation – XPT IGBT Module

Brake IGBT
30
T_VJ = 125°C
25°C
20
I_C
[A]
10
30
V_GE = 15 V
17 V
19 V
20
I_C
[A]
10
13 V
11 V
9V
0
0
1
2
3
V_CE [V]
Fig. 1 Typ. output characteristics
T_VJ = 125°C
0
012345
V_CE [V]
Fig. 2 Typ. output characteristics
MIXA20WB1200TMI
tentative
30
20
I_C
[A]
10
T_VJ = 125°C
T_VJ = 25°C
0
5 6 7 8 9 10 11 12 13
V_CE [V]
Fig. 3 Typ. transfer characteristics
20
I_C = 15 A
V_CE = 600 V
15
V_GE
10
[V]
5
4
R_G = 56
V_CE = 600 V
3 ^{VGE = ±15 V}
T_VJ = 125°C
E
2
[mJ]
1
2.8
I_C = 15 A
E_on
V_CE = 600 V
2.4 ^{VGE = ±15 V}
T_VJ = 125°C
E_off
E
2.0
[mJ]
E_off
1.6
E_on
0
0 10 20 30 40 50 60
Q_G [nC]
Fig. 4 Typ. turn-on gate charge
0
0
10
20
30
I_C [A]
Fig. 5 Typ. switching energy
vs. collector current
1.2
40 60 80 100 120 140 160
R_G [ ]
Fig. 6 Typ. switching energy
versus gate resistance
2
1
Z_thJC
[K/W]
0.1
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
Ri t_i
[K/W] [s]
1 0.252 0.0015
2 0.209 0.03
3 0.541 0.03
4 0.258 0.08
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129