GWM160-0055X1 Datasheet, PDF (6/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

50
160 A
100 A
40
I_F = 50 A
30
20
10
V_R = 24 V
T_J = 125°C
0
200 400 600 800 1000 1200
-di_F/dt [A/µs]
Fig. 13 Reverse recovery time t_rr
of the body diode vs. di/dt
0.6
0.5
0.4
0.3
160 A
100 A
0.2 _{IF = 50 A}
0.1
0.0
200 400
600 800
-di_F /dt [A/µs]
V_R = 24 V
T_J = 125°C
1000 1200
Fig. 15 Reverse recovery charge Q_rr
of the body diode vs. di/dt
V_GS
0.1 V_GS
V_DS
I_D
0.9 I_D
0.1 I_D
t_d(on) t_r
0.9 V_GS
t
0.9 I_D
t_d(off)
0.1 I_{D t}
t_f
Fig. 17 Definition of switching times
IXYS reserves the right to change limits, test conditions and dimensions.
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GWM 160-0055X1
30
25
20
15
160 A
100 A
10
I_F = 50 A
5
V_R = 24 V
T_J = 125°C
0
200 400 600 800 1000 1200
-di_F/dt [A/µs]
Fig. 14 Reverse recovery current I_RM
of the body diode vs. di/dt
350
V_GS = 0 V
300
250
200
150
T_J = -25°C
100
25°C
125°C
50
150°C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD [V]
Fig. 16 Source drain diode current I_F vs.
source drain voltage V_SD (body diode)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
GWM 160-0055X1
10
100
1000
10000
t [ms]
Fig. 18 Typ. thermal impedance junction to
heatsink Z_thJH with heat transfer paste
20110307i
6-6