GWM160-0055X1 Datasheet, PDF (4/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

1.2
I_DSS = 0.25 mA
1.1
1.0
0.9
0.8
0.7
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 1 Drain source breakdown voltage V_DSS
vs. junction temperature T_J
350
V_GS=
300
20 V
15 V
10 V
7V
250
T_J = 25°C
6.5 V
200
6V
150
5.5 V
100
5V
50
0
0
1
2
3
4
5
6
V_DS [V]
Fig. 3 Typical output characteristic
GWM 160-0055X1
350
V_DS = 24 V
300
250
200
150
100
50
T_J = 125°C
T_J = 25°C
0
3
4
5
6
7
8
V_GS [V]
Fig. 2 Typical transfer characteristic
350
V_GS =
300 ^{20 V}
15 V
250
10 V
200
150
100
50
TJ = 125°C
7V
6.5 V
6V
5.5 V
5V
0
0
1
2
3
4
5
6
V_DS [V]
Fig. 4 Typical output characteristic
2.5
7.5
V_GS = 10 V
I_D = 160 A
2.0
6.0
1.5
R_DS(on)
1.0
4.5
R_DS(on) normalized
3.0
0.5
1.5
0.0
0.0
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 5 Drain source on-state resistance R_DS(on)
versus junction temperature T_J
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
3.0
2.5
5 V 5.5 V 6 V 6.5 V 7 V
2.0
T_J = 125°C
1.5
1.0
0.5
0
V_GS =
10 V
15 V
20 V
50 100 150 200 250 300 350
I_D [A]
Fig. 6 Drain source on-state
resistance R_DS(on) versus I_D
20110307i
4-6