GWM160-0055X1 Datasheet, PDF (1/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 160-0055X1
V_DSS = 55 V
I_D25
= 150 A
R = _{DSon typ.} 2.7 mW
L+
G3
G5
G1
S3
S5
S1
L1
L2
L3
G4
G6
G2
S4
S6
S2
L-
MOSFETs
Symbol Conditions
V_DSS
V_GS
T_J = 25°C to 150°C
I_D25
T_C = 25°C
I_D90
T_C = 90°C
I_F25
T_C = 25°C (diode)
I_F90
T_C = 90°C (diode)
Maximum Ratings
55 V
± 20
V
150 A
115 A
120 A
75 A
Symbol Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
V_GS(th)
I_DSS
I_GSS
on chip level at
V_GS = 10 V; I_D = 100 A
V_DS = 20 V; I_D = 1 mA
V_DS = V_DSS; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
Q_g
Q_gs
V_GS = 10 V; V_DS = 12 V; I_D = 160 A
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_recoff
inductive load
V_GS = 10 V; V_DS = 24 V
I_D = 100 A; R_G = 39 Ω;
T_J = 125°C
R_thJC
R_thJH
with heat transfer paste (IXYS test setup)
1) _{VDS = ID·(RDS(on) + 2RPin to ) Chip}
2.7
4.5
2.5
0.1
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
1.3
3.3 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307i
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