GWM100-01X1-SL Datasheet, PDF (5/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 100-01X1
14
12
I_D = 90 A
T_J = 25°C
10
8
V_DS = 20 V
V_DS = 65 V
6
4
2
0
0 20 40 60 80 100 120
Q_G [nC]
Fig.7 Gate charge characteristic
120
T_J = 175°C
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
T_C [°C]
Fig. 8 Drain current I_D vs. case temperature T_C
0.6
300
V_DS = 48 V
0.5 ^VGS ^{= +10/0 V}
250
R_G = 33 Ω
0.4 ^TJ ^{= 125°C}
200
0.3
0.2
E_on
0.1
t_d(on) ¹⁵⁰
t_r
100
50
E_rec(off) x10
0.0
0
0 10 20 30 40 50 60 70 80 90 100
s ^I_D [A]
Fig. 9 Typ. turn-on energy & switching times
a ^{vs. collector current, inductive switching}
1.6
V_DS = 48 V
1.4 _{VGS = +10/0 V}
1.2 ^{ID = 90 A}
T_J = 125°C
1.0
h ⁴⁰⁰
p
350
t_d(on)
300
250
E_on
t_r
0.8
200
e
0.6
0.5
0.4
V_DS = 48 V
tV_GS = +10/0 V
R_G = 33 Ω
u^{TJ = 125°C}
- o0.3
0.2
0.1
E_off
600
500
400
t_d(off) ³⁰⁰
200
100
t_f
0.0
0
0 10 20 30 40 50 60 70 80 90 100
I_D [A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.2
V_DS = 48 V
1.0 V_GS = +10/0 V
I_D = 90 A
0.8 T_J = 125°C
0.6
1200
1000
800
t_d(off)
600
0.6
150
0.4
100
0.2
0.0
0
E_rec(off) x10
50
0
10 20 30 40 50 60 70 80 90 100
R_G [Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
0.4
400
E_off
0.2
200
t_f
0.0
0
0 10 20 30 40 50 60 70 80 90 100
R_G [Ω]
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
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20110505f
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