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GWM100-01X1-SL Datasheet, PDF (1/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 100-01X1
VDSS = 100 V
ID25
= 90 A
R = DSon typ. 7.5 mW
L+
G3
G5
G1
S3
S5
S1
L1
L2
L3
G4
G6
G2
Straight leads
Surface Mount Device
S4
S6
S2
L-
MOSFETs
Applications
Symbol
VDSS
Conditions
TJ = 25°C to 150°C
Maximum Ratings
100 V
tAC drives
• in automobiles
- electric power steering
VGS
ID25
TC = 25°C
± 20
90
uV - starter generator
• in industrial vehicles
A
- propulsion drives
ID90
IF25
IF90
Symbol
R 1)
DSon
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
TC = 90°C
TC = 25°C (diode)
TC = 90°C (diode)
Conditions
on chip level at
VGS = 10 V; ID = 80 A
VDS = 20 V; ID = 250 µA
68 A
90 A
68 A
- o Characteristic Values
(TJ = 25°C, unless otherwise specified)
e min. typ. max.
TJ = 25°C
a s TJ = 125°C
7.5
14
2.5
8.5 mW
mW
4.5 V
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
hTJ = 25°C
TJ = 125°C
1 µA
0.1
mA
0.2 µA
p VGS = 10 V; VDS = 65 V; ID = 90 A
90
nC
30
nC
30
nC
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead frames available
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 48 V
ID = 70 A; RG = 33 Ω;
TJ = 125°C
130
95
290
55
0.4
0.4
0.007
ns
- straight leads (SL)
ns
- SMD lead version (SMD)
ns
ns
mJ
mJ
mJ
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1.0 K/W
1.3 1.6 K/W
1) VDS = ID·(RDS(on) + 2RPin to ) Chip
Recommended replacements: MTI 85W100GC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110505f
1-6