GWM100-01X1-SL Datasheet, PDF (4/6 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

GWM 100-01X1
1.2
I_DSS = 0.25 mA
1.1
180
160
V_DS = 30 V
140
120
1.0
100
0.9
0.8
0.7
-25 0 25 50 75 100 125 150
T_J [°C]
Fig. 1 Drain source breakdown voltage V_DSS
vs. junction temperature T_J
180
V_GS=
160 20 V
15 V
140
10 V
T_J = 25°C
120
100
80
7V
60
6.5 V
40
20
0
0
1
2
3
4
V_DS [V]
Fig. 3 Typical output characteristic
6V
5.5 V
5V
a⁵
6
s
2.5
V_GS = 10 V
I_D = 90 A
2.0
h
p
20
16
e
80
60
T_J = 125°C
40
20
T_J = 25°C
0
012345678
V_GS [V]
Fig. 2 Typical transfer characteristic
180
t^{VGS =}
160
20 V
15 V
140
u ₁₂₀
100
o₈₀
- ₆₀
10 V
TJ = 125°C
7V
6.5 V
40
6V
20
5.5 V
5V
0
0
1
2
3
4
5
6
V_DS [V]
Fig. 4 Typical output characteristic
5.0
5.5 V 6 V 6.5 V
4.5
4.0
T_J = 125°C
1.5
12
R_DS(on)
R_DS(on) normalized
1.0
8
0.5
4
0.0
0
-25 0 25 50 75 100 125 150
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
7V
V_GS =
10 V
15 V
20 V
20 40 60 80 100 120 140 160 180 200
T_J [°C]
Fig. 5 Drain source on-state resistance R_DS(on)
versus junction temperature T_J
I_D [A]
Fig. 6 Drain source on-state
resistance R_DS(on) versus I_D
IXYS reserves the right to change limits, test conditions and dimensions.
20110505f
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