FMM150-0075X2F Datasheet, PDF (5/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET

FMM150-0075X2F
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
30
R_G = 2Ω , V_GS = 10V
V_DS = 38V
25
20
I _D = 230A
15
I _D = 115A
10
5
25
35
45
55
65
75
85
95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
50
45 ^{t r}
t_d(on) - - - -
T_J = 125ºC, V_GS = 10V
40 V_DS = 38V
I _D = 230A, 115A
35
30
25
20
15
10
5
2
4
6
8
10
12
14
R_G - Ohms
55
50
45
40
35
30
25
20
15
10
16
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
26
60
24
t_f
t_d(off) - - - -
55
R_G = 2Ω, V_GS = 10V
22
V_DS = 38V
50
20
T_J = 125ºC ⁴⁵
18
40
16
35
14
30
12
T_J = 25ºC
25
10
20
110 120 130 140 150 160 170 180 190 200 210 220 230
I_D - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
R_G = 2Ω , V_GS = 10V
20
V_DS = 38V
18
T_J = 25ºC
16
14
12
T_J = 125ºC
10
110 120 130 140 150 160 170 180 190 200 210 220 230
I_D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
28 t _f
t_d(off) - - - -
26
R_G = 2Ω, V_GS = 10V
V_DS = 38V
24
22
20 I D = 115A
18
16
14
I _D = 230A
12
10
25 35 45 55 65 75 85 95 105 115
T_J - Degrees Centigrade
65
60
55
50
45
40
35
30
25
20
15
125
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
280
t_f
t_d(off) - - - -
240
T_J = 125ºC, V_GS = 10V
V_DS = 38V
200
160
I _D = 115A
120
80
40
0
2
I _D = 230A
4
6
8
10
12
14
R_G - Ohms
280
240
200
160
120
80
40
0
16
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