FMM150-0075X2F Datasheet, PDF (4/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET

FMM150-0075X2F
Fig. 7. Input Admittance
160
140
120
100
80
60
T_J = 150ºC
25ºC
- 40ºC
40
20
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
300
250
200
150
T_J = 150ºC
100
T_J = 25ºC
50
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V_SD - Volts
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
150ºC
20
40
60
80
100
120
140
160
I_D - Amperes
10
9
8
7
6
5
4
3
2
1
0
0
V_DS = 38V
I _D = 100A
I _G = 10mA
20
40
Fig. 10. Gate Charge
60
80
100 120 140 160 180
Q_G - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 11. Capacitance
Ciss
1000.0
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
100.0
25µs
100µs
1,000
10.0
Coss
1.0
Crss
100
0
5
10
15
20
25
30
35
40
V_DS - Volts
0.1
1
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
T_J = 175ºC
T_C = 25ºC
Single Pulse
10
V_DS - Volts
1ms
10ms
100ms
DC
100
IXYS REF: FMM150-0075X2F(68)8-28-09