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FMM150-0075X2F Datasheet, PDF (2/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET
◁
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
Characteristic Values
Min. Typ. Max.
75
V
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
VDS = VGS, ID = 250μA
2.0
VGS = ±20 V, VDS = 0V
VDS = VDSS, VGS = 0V
TJ = 150°C
VGS = 10V, ID = 100A, Note 1
VDS = 10V, ID = 60A, Note 1
50
VGS = 0V, VDS = 25 V, f = 1 MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 z VDSS, ID = 115A
RG = 2Ω (External)
VGS= 10V, VDS = 0.5 z VDSS, ID = 100A
83
10.5
1165
125
23
18
33
15
178
37
55
0.15
4.0 V
± 200 nA
25 μA
250 μA
5.8 mΩ
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.88 °C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
TJ = 25°C Unless Otherwise Specified)
Min. Typ. Max.
IS
VGS = 0V
230
A
ISM
Repetitive, Pulse Width Limited by TJM
900
A
VSD
IF = 75A, VGS = 0V, Note 1
1.5
V
trr
IF = 115A, -di/dt = 100A/μs
IRM
QRM
VR = 37V, VGS = 0V
66
ns
4.4
A
145
nC
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
FMM150-0075X2F
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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