FMM110-015X2F Datasheet, PDF (5/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET

FMM110-015X2F
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
19
R_G = 3.3Ω
V_GS = 10V
18
V_DS = 75V
17
16
I _D = 110A
15
I _D = 55A
14
13
12
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
280
90
240
t_r
t_d(on) - - - -
T_J = 125ºC, V_GS = 10V
80
200
V_DS = 75V
70
160
I _D = 110A
60
120
50
I _D = 55A
80
40
40
30
0
20
2
4
6
8
10 12 14 16 18 20
R_G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
23
80
t_f
t_d(off) - - - -
22
R_G = 3.3Ω, V_GS = 10V
70
V_DS = 75V
21
60
20
T_J = 125ºC
50
19
T_J = 25ºC
40
18
30
17
20
55 60 65 70 75 80 85 90 95 100 105 110
I_D - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
R_G = 3.3Ω
19
V_GS = 10V
V_DS = 75V
18
T_J = 125ºC
17
16
T_J = 25ºC
15
14
55 60 65 70 75 80 85 90 95 100 105 110
I_D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
28
80
t_f
t_d(off) - - - -
26
R_G = 3.3Ω, V_GS = 10V
70
V_DS = 75V
24
60
22
50
I _D = 55A, 110A
20
40
18
30
16
20
25 35 45 55 65 75 85 95 105 115 125
T_J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
120
250
t_f
t_d(off) - - - -
100
T_J = 125ºC, V_GS = 10V
210
V_DS = 75V
80
170
60
I _D = 55A
130
40
90
I _D = 110A
20
50
0
10
2
4
6
8
10 12 14 16 18 20
R_G - Ohms
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