FMM110-015X2F Datasheet, PDF (1/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET

Advance Technical Information
TrenchT2^TM HiperFET
N-Channel Power
MOSFET
Phase Leg Topology
FMM110-015X2F
33
T1
55
4₄
T2
11
2₂
V_DSS =
I_D25 =
≤ R_DS(on)
= t_rr(typ)
150V
53A
20mΩ
85ns
ISOPLUS i4-Pak^TM
Symbol
T_J
T_JM
T_stg
V_ISOLD
T_L
T_SOLD
F_C
Test Conditions
50/60H_Z, RMS, t = 1min, Leads-to-Tab
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
Maximum Ratings
-55 ... +175
°C
175
°C
-55 ... +175
°C
2500
~V
300
°C
260
°C
20..120 / 4.5..27 N/lb.
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
Maximum Ratings
150
V
150
V
± 30
V
53
A
300
A
55
A
800
mJ
10
V/ns
180
W
Symbol
C_P
d_S ,d_A
d_S ,d_A
Weight
Test Conditions
Coupling Capacitance Between Shorted
Pins and Mounting Tab in the Case
Pin - Pin
Pin - Backside Metal
Characteristic Values
Min. Typ. Max.
40
pF
1.7
mm
5.5
mm
9
g
1
5
Isolated Tab
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
z _{Avalanche Rated}
z _{Low QG}
z _{Low Drain-to-Tab Capacitance}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100145(04/09)