FMM110-015X2F Datasheet, PDF (4/6 Pages) IXYS Corporation – TrenchT2 HiperFET N-Channel Power MOSFET

FMM110-015X2F
Fig. 7. Input Admittance
160
140
120
T_J = 150ºC
100
25ºC
- 40ºC
80
60
40
20
0
3.4
3.8
4.2
4.6
5.0
5.4
5.8
6.2
6.6
V_GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
350
300
250
200
150
100
T_J = 150ºC
50
T_J = 25ºC
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V_SD - Volts
180
160
140
120
100
80
60
40
20
0
0
Fig. 8. Transconductance
T_J = - 40ºC
25ºC
150ºC
20
40
60
80
100 120 140 160
I_D - Amperes
Fig. 10. Gate Charge
10
9
V_DS = 75V
I _D = 55A
8
I _G = 10mA
7
6
5
4
3
2
1
0
0
20
40
60
80
100
120
140
160
Q_G - NanoCoulombs
100,000
Fig. 11. Capacitance
f = 1 MHz
1,000.0
Fig. 12. Forward-Bias Safe Operating Area
R_DS(on) Limit
10,000
Ciss
100.0
1,000
100
Coss
Crss
10
0
5
10
15
20
25
30
35
40
V_DS - Volts
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
10.0
1.0
0.1
1
T_J = 175ºC
T_C = 25ºC
Single Pulse
25µs
100µs
100ms
1ms
10ms
10
100
V_DS - Volts
1000
IXYS REF: F_110N15T2(61)4-23-09-A