DE275-201N25A Datasheet, PDF (5/5 Pages) IXYS Corporation – RF Power MOSFET

DE275-201N25A
RF Power MOSFET
201N25A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3
MOSFET model. It includes the stray inductive terms L_G, L_S and L_D. Rd is the R_DS(ON) of the device, Rds is
the resistive leakage term. The output capacitance, C_OSS, and reverse transfer capacitance, C_RSS are mod-
eled with reversed biased diodes. This provides a varactor type response necessary for a high power device
model. The turn on delay and the turn off delay are adjusted via Ron and Roff.
10 DRAIN
Ld
4
20 GATE
Lg
Doff
5
Rd
Roff
D1crs
D2crs
6
8
Ron
Don
7
M3
Dcos
Rds
2
Ls
30 SOURCE
Figure 6 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-201n25a.html
Net List:
**********
*SYM=POWMOSN
.SUBCKT 201N25A 10 20 30
* TERMINALS: D G S
* 200 Volt 25 Amp .13 ohm N-Channel Power MOSFET
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 .13
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=25.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=200 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=200 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0260 Rev 4
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