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| DE275-201N25A Datasheet, PDF (2/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol
Test Conditions
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg
Qgs
Qgd
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Source-Drain Diode
Symbol
IS
ISM
VSD
Trr
Test Conditions
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
DE275-201N25A
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
0.3
2500
265
max.
â¦
pF
pF
42
pF
21
pF
5
ns
5
ns
8
ns
8
ns
81
nC
14
nC
42
nC
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
25
A
150
A
2.0
V
300
ns
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical
note on the IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
5,034,796
5,049,961
5,063,307
5,187,117
5,381,025
5,640,045
4,931,844
5,237,481
5,017,508
5,486,715
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