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DE275-201N25A Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
dv/dt
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
Maximum Ratings
200
V
200
V
±20
V
±30
V
25
A
150
A
25
A
20 mJ
5 V/ns
VDSS
=
ID25
=
RDS(on) =
PDC
=
GATE
200 V
25 A
0.13 â¦
590 W
DRAIN
IS = 0
>200 V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
Tc = 25°C
Derate 1.9W/°C above 25°C
Tc = 25°C
Test Conditions
590 W
284 W
3.0 W
0.25 C/W
0.53 C/W
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 250µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
200
V
2.5
3.0 5.5
V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
.13 â¦
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
13
16
18
S
SG1 SG2
SD1 SD2
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other
hazardous materials
Advantages
⢠Optimized for RF and high speed
switching at frequencies to 100MHz
⢠Easy to mountâno insulators needed
⢠High power density
TJ
-55
+175 °C
TJM
175
°C
Tstg
-55
+175 °C
TL
1.6mm(0.063 in) from case for 10 s
300
°C
Weight
2
g
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