L034 Datasheet, PDF (4/4 Pages) IXYS Corporation – MegaMOSTMFET Module

VMO 380-02 F
15
V_DS = 100 V
V_GS
V I_D = 190 A
I_G = 11 mA
12
9
10000
I_{D A}
1000
Limited by R_DS(on)
T_S = 25°C
T_J = 150°C
non-repetitive
t = 1 ms
6
100
t = 10 ms
3
0
0
500 1000 1500 2000 2n5C00 3000
Q_g
Fig. 7 Typical turn-on gate charge characteristics
t = 100 ms
10
1
10
100
V 1000
V_DS
Fig. 8 Forward Bias Safe Operating Area, I_D = f (V_DS)
1000
nF
C
100
10
1200
A
1000
I_S
800
C_iss
600
C_oss
T_J = 125°C
T_J = 25°C
400
C_rss
200
1
0
5
10
15
20 _V 25
V_DS
Fig. 9 Typical capacitances C = f (V_DS), f = 1 MHz
1000
I_d ⁹⁰⁰
800
D= 0.1
700 _{D= 0.2}
600
D= 0.3
500 _{D= 0.4}
T_K = 80°C
0
0.00 0.25 0.50 0.75 1.00 1.25 V 1.50
V_SD
Fig. 10 Typical forward characteristics of reverse
diode, I_S = f (V_SD)
0.1
K/W
D = 0.5
Z_thJK
D= 0.2
0.01 ^{D= 0.1}
400
300
D= 0.5
D= 0.7
200
D=0.05
D=0.02
D=0.01
100
D = single pulse
0
0.0001
0.001
0.01
0.1
s1
t_p
Fig. 11 Drain current versus pulse width and
duty cycle
0.001
0.001
0.01
0.1
1 _s 10
t_p
Fig. 12 Transient thermal resistance Z_thJK = f (t_p)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025