L034 Datasheet, PDF (3/4 Pages) IXYS Corporation – MegaMOSTMFET Module

VMO 380-02 F
1200
I_D ^A
1000
800
600
400
V_GS = 10 V
9V
8V
7V
6V
1200
I_D A
1000
V_DS = 30 V
800
600
400
200
5V
0
0
1
2
3
4
5V6
V_DS
Fig. 1 Typical output characteristics I_D = f (V_DS)
1.4
R_DS(on)
norm1..3
1.2
V_GS = 10 V
1.1
V_GS = 15 V
1.0
0.9
200
T_J = 125°C
T_J = 25°C
0
0
2
4
6V 8
V_GS
Fig. 2 Typical transfer characteristics I_D = f (V_GS)
2.5
R_DS(on)
norm.
2.0
I_D = 190 A
1.5
1.0
0.8
0 200 400 600 800 10A00
I_D
Fig. 3 Typical R_DS(on) = f (I_D), normalized
1200
0.5
-50 -25 0 25 50 75 100
T_J
Fig. 4 R_DS(on) = f (T_J), normalized
125°C150
450
I_{D 40}A₀
350
300
250
200
150
100
50
0
0
25
50
75 100 125 °C 150
T_S
Fig. 5 Continuous drain current I = f (T )
D
K
1.2
V_DSS
V _{GS(th1) .1}
norm.
1.0
V_GS(th)
V_DSS
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125°C150
T_J
Fig. 6 V = f (T ), V = f (T ), normalized
DSS
J
GS(th)
J
IXYS reserves the right to change limits, test conditions, and dimensions.
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