L034 Datasheet, PDF (2/4 Pages) IXYS Corporation – MegaMOSTMFET Module

VMO 380-02 F
Symbol
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q
gd
R _thJC
R
thJK
Test
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V _DS =10V; I_D=0.5•I_D25 pulsed
V_GS =0V, V_DS=25V, f=1 MHz
TBD
S
48
nF
8.8
nF
3.1
nF
210
ns
V_GS=10V, V_DS=0.5•V_DSS, I_D=0.5•I_D25
500
ns
R_G = 1 Ω (External)
900
ns
350
ns
2090
nC
V_GS=10V, V_DS=0.5•V_DSS, I_D=0.5•I_D25
385
nC
1045
nC
with 30 µm heat transfer paste
0.056K/W
0.083K/W
Source-Drain Diode
Characteristic Values
Symbol
(T_J = 25°C, unless otherwise specified)
Test Conditions
min. typ. max.
I_S
V_GS =0
385 A
I
Repetitive; pulse width limited by T
SM
JM
1540 A
V_SD
I_F=I_S; V_GS=0V,
0.9 1.2 V
Pulse test, t≤300µs, duty cycle d≤2%
t_rr
I _F = I_S, -di/dt = 1200 A/
Dimensions in mm (1 mm = 0.0394")
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025