IXEH40N120 Datasheet, PDF (4/4 Pages) IXYS Corporation – NPT3 IGBT

20
mJ
16
E_on
12
8
4
0
0
td(on)
tr
Eon
E_rec(off)
20
40
100
9n0s
80
70 _t
60
V_CE = 600 V ⁵⁰
V_GE = ±15 V ₄₀
R_G = 39 Ω ₃₀
T_VJ = 125°C ₂₀
10
0
60 A 80
I_C
Fig. 7 Typ. turn on energy and switching
times versus collector current
8
V_CE = 600 V
mJ V_GE = ±15 V
E_on
6 ^{IC = 35 A}
T_VJ = 125°C
4
Eon
td(on)
160
ns
120
t
80
2
tr
40
E_rec(off)
0
0
10 20 30 40 50 60 70 Ω 80
R_G
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
IXEH 40N120
IXEH 40N120D1
6
mJ
E_{off 4}
V_CE = 600 V
V_GE = ±15 V
R_G = 39 Ω
T_VJ = 125°C
1200
E_off
ns
1000
800 ^t
600
2
t_{d(off) 400}
0
0
Fig. 8
200
t_f
0
20
40
60 A 80
I_C
Typ. turn off energy and switching
times versus collector current
4
mJ
E_{off 3}
V_CE = 600 V
V_GE = ±15 V
I_C = 35 A
T_VJ = 125°C
E_off
2
t_d(off)
1
800
ns
600
t
400
200
t_f
0
0
10 20 30 40 50 60 70Ω 80
R_G
Fig.10 Typ. turn off energy and switching
times versus gate resistor
70
60
TI_FVVTVjCG=JEE₁₌₌==_{26+50-°1031C5V02V} 5A°C
VIF_R=35=A 600 V
50
40
30
20
350
15Ω
24Ω
IRM
300
39Ω
56Ω
250
75Ω
RG=
200
75Ω
56Ω _{39Ω 24Ω}
tRR
15Ω
150
100
10
50
0
0
0
200
400
600
800 1000 1200 1400 1600 1800
-diF/dt [A/µs]
Fig. 11 Typ. turn off characteristics
of free wheeling diode
12
10
T_VJ = 125°C
V_R = 600 V
R_G=
15Ω
24Ω
70A
56Ω ^39Ω
8
75Ω
50A
35A
6
I_F=
4
15A
7,5A
2
0
0
200
400
600
800
1000 1200 1400 1600 1800
-diF/dt [A/µs]
Fig. 12 Typ. turn off characteristics
of free wheeling diode
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