IXEH40N120 Datasheet, PDF (3/4 Pages) IXYS Corporation – NPT3 IGBT

120
A
100
I_C
80
V_GE = 17 V
15 V
13 V
60
11 V
40
20
9V
T_VJ = 25°C
0
0 1 2 3 4 5 6 V7
V_CE
Fig. 1 Typ. output characteristics
120
A
100
I_{C 80}
V_CE = 20 V
60
40
T_VJ = 125°C
20
0
4
6
8
T_VJ = 25°C
10 12
V_GE
14 V 16
Fig. 3 Typ. transfer characteristics
20
V
15
V_GE
10
5
0
0
Fig. 5
V_CE = 600 V
I_C = 35 A
40
80
120 160nC 200
Q_G
Typ. turn on gate charge
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IXEH 40N120
IXEH 40N120D1
120
A
100
I_C
80
V_GE = 17 V
15 V
13 V
60
11 V
40
9V
20
T_VJ = 125°C
0
0 1 2 3 4 5 6 V7
V_CE
Fig. 2 Typ. output characteristics
90
A
75
I_F
60
45
T_VJ = 125°C
30
T_VJ = 25°C
15
0
0
1
2
3V4
V_F
Fig. 4 Typ. forward characteristics of
free wheeling diode
10
K/W
Z_thJC 1
0.1
0.01
diode [D1 version only]
IGBT
single pulse
0.001
0.00001 0.0001 0.001 0.01
0.1
t
MUBW3512E7
1 s 10
Fig. 6 Typ. transient thermal impedance
3-4