IXEH40N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – NPT3 IGBT

NPT³ IGBT
IXEH 40N120
IXEH 40N120D1
I_C25
= 60 A
V_CES
= 1200 V
V_{CE(sat) typ.} = 2.4 V
C
G
E
IXEH 40N120
C
TO-247 AD
G
E
G
C
IXEH 40N120D1
E
C (TAB)
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
t_SC
(SCSOA)
P_tot
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 90°C
60
A
40
A
V_GE
=
±15
V;
R
G
=
39
Ω;
T_VJ
=
125°C
50
A
RBSOA, Clamped inductive load; L = 100 µH
V_CES
V_CE = 900V; V_GE = ±15 V; R_G = 39 Ω; T_VJ = 125°C
10
µs
non-repetitive
T_C = 25°C
300
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
40
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 1 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 600 V; I = 40 A
CE
C
V_GE = ±15 V; R_G = 39 Ω
2.4 3.0 V
2.8
V
4.5
6.5 V
0.4 mA
0.4
mA
200 nA
85
ns
50
ns
440
ns
50
ns
6.1
mJ
3.0
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 600 V; V_GE = 15 V; I_C = 25 A
2
nF
250
nC
0.42 K/W
Features
• NPT³ IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• optional HiPerFRED^TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• TO-247 package
- industry standard outline
- epoxy meets UL 94V-0
Applications
• AC drives
• DC drives and choppers
• Uninteruptible power supplies (UPS)
• switched-mode and resonant-mode
power supplies
• inductive heating, cookers
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IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]