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| FMP76-010T Datasheet, PDF (4/4 Pages) IXYS Corporation – Trench P & N-Channel Power MOSFET Common Drain Topology | |||
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Source-Drain Diode
Symbol
Test Conditions3
Characteristic Values
TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
62
A
ISM
Repetitive, pulse width limited by TJM
350
A
VSD
IF = 25A, VGS = 0V, Note 1
1.0
V
trr
QRM
IRM
IF = 25A, -di/dt = 100A/μs
VR = 50V, VGS = 0V
67
ns
160
nC
4.7
A
Note 1: Pulse test, t ⤠300μs, duty cycle, d ⤠2 %.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated objective result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
FMP76-010T
IXYS reserves the right to change limits, test conditions, and dimensions.
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