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FMP76-010T Datasheet, PDF (2/4 Pages) IXYS Corporation – Trench P & N-Channel Power MOSFET Common Drain Topology
◁
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = - 250 μA
Characteristic Values
Min. Typ. Max.
- 100
V
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
- 4.0 V
IGSS
VGS = ±20 V, VDS = 0V
± 100 nA
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
-15 μA
- 750 μA
RDS(on)
VGS = -10V, ID = - 38A, Note 1
24 mΩ
gfs
Ciss
Coss
Crss
VDS = -10V, ID = - 38A, Note 1
VGS = 0V, VDS = - 25V, f = 1MHz
35
58
S
13.7
nF
890
pF
275
pF
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 z VDSS, ID = - 38A
RG = 1Ω (External)
25
ns
40
ns
52
ns
20
ns
Qg(on)
Qgs
Qgd
VGS= -10V, VDS = 0.5 z VDSS, ID = - 38A
197
nC
65
nC
65
nC
RthJC
RthCS
0.95 °C/W
0.15
°C/W
FMP76-010T
ISOPLUS i4-PakTM Outline
Ref: IXYS CO 0077 R0
Drain-Source Diode
Symbol
Test Conditions2
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
- 54
A
ISM
Repetitive, pulse width limited by TJM
- 304
A
VSD
IF = - 38A, VGS = 0V, Note 1
- 1.3
V
trr
IF = - 38A, di/dt = 100A/μs
QRM
VR = - 50V, VGS = 0V
IRM
70
ns
215
nC
-6
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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