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| FMP76-010T Datasheet, PDF (3/4 Pages) IXYS Corporation – Trench P & N-Channel Power MOSFET Common Drain Topology | |||
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N - CHANNEL
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IA
EAS
PD
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
Maximum Ratings
100
V
100
V
± 20
V
62
A
300
A
65
A
500
mJ
89
W
Symbol
Test Conditions2
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, (Note 1)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS = 10V, ID = 60A, (Note 1)
VGS = 0V, VDS = 25 V, f = 1 MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 z VDSS, ID = 25A
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS= 10V, VDS = 0.5 z VDSS, ID = 25A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
± 200 nA
5 μA
250 μA
55
93
5080
635
95
30
47
44
28
11 mΩ
S
pF
pF
pF
ns
ns
ns
ns
104
nC
30
nC
29
nC
1.4 °C/W
0.15
°C/W
FMP76-010T
© 2008 IXYS CORPORATION, All rights reserved
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